Nanoscale Transistors: Device Physics, Modeling Simulation
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Preise | Aug. 16 | Mai 17 | Aug. 17 |
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Schnitt | Fr. 78.21 (€ 80.15)¹ | Fr. 185.89 (€ 190.48)¹ | Fr. 169.03 (€ 173.21)¹ |
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1
Nanoscale Transistors (2005)
EN HC NW
ISBN: 9780387280028 bzw. 0387280022, in Englisch, Springer, gebundenes Buch, neu.
Lieferung aus: Deutschland, Versandfertig in 1 - 2 Wochen.
The continuous scaling of transistors in the last half of century has been the driving force for electronics. The channel length of the transistors in production today is below 100nm. A wide variety of devices are also being explored to complement or even replace silicon transistors at molecular scales. Similarities between nanoscale and micronscale transistors exist, but nanotransistors also behave in drastically different ways. For example, ballistic transport and quantum effects become much m Silicon technology continues to progress, but device scaling is rapidly taking the metal oxide semiconductor field-effect transistor (MOSFET) to its limit. When MOS technology was developed in the 1960´s, channel lengths were about 10 micrometers, but researchers are now building transistors with channel lengths of less than 10 nanometers. New kinds of transistors and other devices are also being explored. Nanoscale MOSFET engineering continues, however, to be dominated by concepts and approaches originally developed to treat microscale devices. To push MOSFETs to their limits and to explore devices that may complement or even supplant them, a clear understanding of device physics at the nano/molecular scale will be essential. Our objective is to provide engineers and scientists with that understandin- not only of nano-devices, but also of the considerations that ultimately determine system performance. It is likely that nanoelectronics will involve much more than making smaller and different transistors, but nanoscale transistors provides a specific, clear context in which to address some broad issues and is, therefore, our focus in this monograph. 09.12.2005, gebundene Ausgabe.
The continuous scaling of transistors in the last half of century has been the driving force for electronics. The channel length of the transistors in production today is below 100nm. A wide variety of devices are also being explored to complement or even replace silicon transistors at molecular scales. Similarities between nanoscale and micronscale transistors exist, but nanotransistors also behave in drastically different ways. For example, ballistic transport and quantum effects become much m Silicon technology continues to progress, but device scaling is rapidly taking the metal oxide semiconductor field-effect transistor (MOSFET) to its limit. When MOS technology was developed in the 1960´s, channel lengths were about 10 micrometers, but researchers are now building transistors with channel lengths of less than 10 nanometers. New kinds of transistors and other devices are also being explored. Nanoscale MOSFET engineering continues, however, to be dominated by concepts and approaches originally developed to treat microscale devices. To push MOSFETs to their limits and to explore devices that may complement or even supplant them, a clear understanding of device physics at the nano/molecular scale will be essential. Our objective is to provide engineers and scientists with that understandin- not only of nano-devices, but also of the considerations that ultimately determine system performance. It is likely that nanoelectronics will involve much more than making smaller and different transistors, but nanoscale transistors provides a specific, clear context in which to address some broad issues and is, therefore, our focus in this monograph. 09.12.2005, gebundene Ausgabe.
2
Symbolbild
Nanoscale Transistors: Device Physics, Modeling and Simulation
EN PB US
ISBN: 9780387280028 bzw. 0387280022, in Englisch, Springer, Deutschland, Taschenbuch, gebraucht.
Lieferung aus: Vereinigte Staaten von Amerika, Versandkosten nach: USA.
Von Händler/Antiquariat, knkbooks.
Brand New Softcover International Edition, Have same content as US Edition. ISBN And Book cover may be different. Not a Used Book, Book Language:English. Printed in Black and White. Excellent customer service response.
Von Händler/Antiquariat, knkbooks.
Brand New Softcover International Edition, Have same content as US Edition. ISBN And Book cover may be different. Not a Used Book, Book Language:English. Printed in Black and White. Excellent customer service response.
3
Symbolbild
Nanoscale Transistors: Device Physics, Modeling and Simulation
EN PB
ISBN: 9780387280028 bzw. 0387280022, in Englisch, Springer, Deutschland, Taschenbuch.
Lieferung aus: Vereinigte Staaten von Amerika, Versandkosten nach: USA.
Von Händler/Antiquariat, INDEPENDENTSELLER.
Paperback. New. Brand New Softcover International Edition, Have same content as US Edition. ISBN is different. Never Used, in English Language. Printed in Black and White. 100% return and refund.
Von Händler/Antiquariat, INDEPENDENTSELLER.
Paperback. New. Brand New Softcover International Edition, Have same content as US Edition. ISBN is different. Never Used, in English Language. Printed in Black and White. 100% return and refund.
4
Nanoscale Transistors: Device Physics, Modeling and Simulation
EN NW
ISBN: 9780387280028 bzw. 0387280022, in Englisch, Springer, neu.
Lieferung aus: Schweiz, 09.12.2005.
The continuous scaling of transistors in the last half of century has been the driving force for electronics. The channel length of the transistors in production today is below 100nm. A wide variety of devices are also being explored to complement or even replace silicon transistors at molecular scales. Similarities between nanoscale and micronscale transistors exist, but nanotransistors also behave in drastically different ways. For example, ballistic transport and quantum effects become much, Silicon technology continues to progress, but device scaling is rapidly taking the metal oxide semiconductor field-effect transistor (MOSFET) to its limit. When MOS technology was developed in the 1960´s, channel lengths were about 10 micrometers, but researchers are now building transistors with channel lengths of less than 10 nanometers. New kinds of transistors and other devices are also being explored. Nanoscale MOSFET engineering continues, however, to be dominated by concepts and approaches originally developed to treat microscale devices. To push MOSFETs to their limits and to explore devices that may complement or even supplant them, a clear understanding of device physics at the nano/molecular scale will be essential. Our objective is to provide engineers and scientists with that understandin- not only of nano-devices, but also of the considerations that ultimately determine system performance. It is likely that nanoelectronics will involve much more than making smaller and different transistors, but nanoscale transistors provides a specific, clear context in which to address some broad issues and is, therefore, our focus in this monograph.
The continuous scaling of transistors in the last half of century has been the driving force for electronics. The channel length of the transistors in production today is below 100nm. A wide variety of devices are also being explored to complement or even replace silicon transistors at molecular scales. Similarities between nanoscale and micronscale transistors exist, but nanotransistors also behave in drastically different ways. For example, ballistic transport and quantum effects become much, Silicon technology continues to progress, but device scaling is rapidly taking the metal oxide semiconductor field-effect transistor (MOSFET) to its limit. When MOS technology was developed in the 1960´s, channel lengths were about 10 micrometers, but researchers are now building transistors with channel lengths of less than 10 nanometers. New kinds of transistors and other devices are also being explored. Nanoscale MOSFET engineering continues, however, to be dominated by concepts and approaches originally developed to treat microscale devices. To push MOSFETs to their limits and to explore devices that may complement or even supplant them, a clear understanding of device physics at the nano/molecular scale will be essential. Our objective is to provide engineers and scientists with that understandin- not only of nano-devices, but also of the considerations that ultimately determine system performance. It is likely that nanoelectronics will involve much more than making smaller and different transistors, but nanoscale transistors provides a specific, clear context in which to address some broad issues and is, therefore, our focus in this monograph.
5
Nanoscale Transistors, Device Physics, Modeling and Simulation (2005)
EN HC NW
ISBN: 9780387280028 bzw. 0387280022, in Englisch, Springer-Verlag New York Inc. gebundenes Buch, neu.
Lieferung aus: Niederlande, Vermoedelijk 4-6 weken.
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