Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices
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Lieferung aus: Vereinigte Staaten von Amerika, Lagernd, zzgl. Versandkosten.
This special collection covers: 1. the technology of semiconductor-on-insulator structures and devices; 2. the physics of new SOI devices; 3. SOI sensors and MEMS; 4. nanodots, nanowires and nanofilms. The first part covers a wide variety of SemOI-based structures such as ZnO-on-Insulators, a-SiC-on-Si oxide, graphite inner films fabricated by ion implantation, and others. The second part presents new devices based upon impact ionization near to the source junction, the modeling of charge transport in nano-scale SOI MOSFETs, the electrical properties of SOI MOSFETs with LaLuO3 high-k gate dielectric and the study of neutron effects upon the behavior of nanometer-scale SOI devices. The third part considers various types of SOI sensors and MEMS, together with their characteristics and applications. The fourth part describes the fabrication and properties of quantum-dimensional structures such as nanowires and nanodots. This book will therefore be useful to a wide readership.Volume is indexed by Thomson Reuters CPCI-S (WoS).

Lieferung aus: Deutschland, Versandkostenfrei.
Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices: This special collection covers: 1. the technology of semiconductor-on-insulator structures and devices 2. the physics of new SOI devices 3. SOI sensors and MEMS 4. nanodots, nanowires and nanofilms. The first part covers a wide variety of SemOI-based structures such as ZnO-on-Insulators, a-SiC-on-Si oxide, graphite inner films fabricated by ion implantation, and others. The second part presents new devices based upon impact ionization near to the source junction, the modeling of charge transport in nano-scale SOI MOSFETs, the electrical properties of SOI MOSFETs with LaLuO3 high-k gate dielectric and the study of neutron effects upon the behavior of nanometer-scale SOI devices. The third part considers various types of SOI sensors and MEMS, together with their characteristics and applications. The fourth part describes the fabrication and properties of quantum-dimensional structures such as nanowires and nanodots. This book will therefore be useful to a wide readership.Volume is indexed by Thomson Reuters CPCI-S (WoS).The 21 selected papers cover the technology of semiconductor-on-insulator (SOI) structures and devices the physics of new SOI devices SOI sensors and mechanical and electro-mechanical systems and nanodots, nanowires, and nanofilms. Among the topics are hydrogen gettering within processed oxygen-implanted silicon, semi-analytical models of field-effect transistors with low-dimensional channels, polysilicon on insulator structures for sensor application at electron irradiation and magnetic fields, routes towards novel active pressure sensors in SOI technology, and interfaces and bulk properties of high-K gadolinium and neodymium oxides on silicon. Englisch, Ebook.