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Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets
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Bester Preis: Fr. 5.34 (€ 5.46)¹ (vom 10.03.2019)Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets
ISBN: 9783319882840 bzw. 3319882848, in Deutsch, Springer Shop, Taschenbuch, neu.
This thesis describes the fabrication of metal-insulator-semiconductor (MIS) structures using very high permittivity dielectrics (based on rare earths) grown by high-pressure sputtering from metallic targets. It demonstrates the possibility of depositing high permittivity materials (GdScO3) by means of high pressure sputtering from metallic targets using in situ plasma oxidation on Si and indium phosphate (InP) substrates. The advantage of this system is the high working pressure, which causes the particles to undergo multiple collisions and become thermalized before reaching the substrate in a pure diffusion process, thus protecting the semiconductor surface from damage. This work presents a unique fabrication using metallic targets and involving a two-step deposition process: a thin metallic film is sputtered in an Ar atmosphere and this film is then plasma oxidized in situ. It also demonstrates the fabrication of GdScO3 on Si with a permittivity value above 30 from metallic Gd and Sc targets. Since co-sputtering was not possible, a nanolaminate of these materials was deposited and annealed. The electrical properties of these devices show that the material is highly interesting from a microelectronic integration standpoint. Soft cover.
Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets
ISBN: 9783319666068 bzw. 3319666061, in Deutsch, Springer Shop, gebundenes Buch, neu.
This thesis describes the fabrication of metal-insulator-semiconductor (MIS) structures using very high permittivity dielectrics (based on rare earths) grown by high-pressure sputtering from metallic targets. It demonstrates the possibility of depositing high permittivity materials (GdScO3) by means of high pressure sputtering from metallic targets using in situ plasma oxidation on Si and indium phosphate (InP) substrates. The advantage of this system is the high working pressure, which causes the particles to undergo multiple collisions and become thermalized before reaching the substrate in a pure diffusion process, thus protecting the semiconductor surface from damage. This work presents a unique fabrication using metallic targets and involving a two-step deposition process: a thin metallic film is sputtered in an Ar atmosphere and this film is then plasma oxidized in situ. It also demonstrates the fabrication of GdScO3 on Si with a permittivity value above 30 from metallic Gd and Sc targets. Since co-sputtering was not possible, a nanolaminate of these materials was deposited and annealed. The electrical properties of these devices show that the material is highly interesting from a microelectronic integration standpoint. Hard cover.
Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets
ISBN: 9783319666068 bzw. 3319666061, in Deutsch, Springer-Verlag Gmbh, gebundenes Buch, neu.
Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets: This thesis describes the fabrication of metal-insulator-semiconductor (MIS) structures using very high permittivity dielectrics (based on rare earths) grown by high-pressure sputtering from metallic targets. It demonstrates the possibility of depositing high permittivity materials (GdScO3) by means of high pressure sputtering from metallic targets using in situ plasma oxidation on Si and indium phosphate (InP) substrates. The advantage of this system is the high working pressure, which causes the particles to undergo multiple collisions and become thermalized before reaching the substrate in a pure diffusion process, thus protecting the semiconductor surface from damage. This work presents a unique fabrication using metallic targets and involving a two-step deposition process: a thin metallic film is sputtered in an Ar atmosphere and this film is then plasma oxidized in situ. It also demonstrates the fabrication of GdScO3 on Si with a permittivity value above 30 from metallic Gd and Sc targets. Since co-sputtering was not possible, a nanolaminate of these materials was deposited and annealed. The electrical properties of these devices show that the material is highly interesting from a microelectronic integration standpoint. Englisch, Buch.
| Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets | Springer | Softcover reprint of the origi
ISBN: 9783319882840 bzw. 3319882848, in Deutsch, Springer, Taschenbuch, neu.
Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets
ISBN: 9783319666068 bzw. 3319666061, in Deutsch, neu.
This thesis describes the fabrication of metal-insulator-semiconductor (MIS) structures using very high permittivity dielectrics (based on rare earths) grown by high-pressure sputtering from metallic targets. It demonstrates the possibility of depositing high permittivity materials (GdScO3) by means of high pressure sputtering from metallic targets using in situ plasma oxidation on Si and indium phosphate (InP) substrates. The advantage of this system is the high working pressure, which causes the particles to undergo multiple collisions and become thermalized before reaching the substrate in a pure diffusion process, thus protecting the semiconductor surface from damage. This work presents a unique fabrication using metallic targets and involving a two-step deposition process: a thin metallic film is sputtered in an Ar atmosphere and this film is then plasma oxidized in situ. It also demonstrates the fabrication of GdScO3 on Si with a permittivity value above 30 from metallic Gd and Sc targets. Since co-sputtering was not possible, a nanolaminate of these materials was deposited and annealed. The electrical properties of these devices show that the material is highly interesting from a microelectronic integration standpoint.
Growth Of High Permittivity Dielectrics By High Pressure Sputtering From Metallic Targets
ISBN: 9783319666068 bzw. 3319666061, in Deutsch, Springer Nature, neu.
María Ánge Pampillón Arce, Books, Science and Nature, Growth Of High Permittivity Dielectrics By High Pressure Sputtering From Metallic Targets, This thesis describes the fabrication of metal-insulator-semiconductor (MIS) structures using very high permittivity dielectrics (based on rare earths) grown by high-pressure sputtering from metallic targets. It demonstrates the possibility of depositing high permittivity materials (GdScO3) by means of high pressure sputtering from metallic targets using in situ plasma oxidation on Si and indium phosphate (InP) substrates. The advantage of this system is the high working pressure, which causes the particles to undergo multiple collisions and become thermalized before reaching the substrate in a pure diffusion process, thus protecting the semiconductor surface from damage. This work presents a unique fabrication using metallic targets and involving a two-step deposition process: a thin metallic film is sputtered in an Ar atmosphere and this film is then plasma oxidized in situ. It also demonstrates the fabrication of GdScO3 on Si with a permittivity value above 30 from metallic Gd and Sc targets. Since co-sputtering was not possible, a nanolaminate of these materials was deposited and annealed. The electrical properties of these devices show that the material is highly interesting from a microelectronic integration standpoint.
Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets (Springer Theses) (2017)
ISBN: 9783319666068 bzw. 3319666061, in Englisch, 211 Seiten, Springer, gebundenes Buch, neu, Erstausgabe.
Von Händler/Antiquariat, Amazon.de.
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Growth of High Permittivity Dielectrics b (2018)
ISBN: 9783319882840 bzw. 3319882848, vermutlich in Englisch, Taschenbuch, neu, Nachdruck.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
Growth of High Permittivity Dielectrics b (2017)
ISBN: 9783319666068 bzw. 3319666061, in Deutsch, gebundenes Buch, neu.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen