Life-Time Estimation of Modern Power Electronics Devices
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Bester Preis: Fr. 41.95 (€ 42.99)¹ (vom 30.11.2019)1
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Life-Time Estimation of Modern Power Electronics Devices (2017)
DE PB NW
ISBN: 9783330852563 bzw. 3330852569, in Deutsch, Noor Publishing Mrz 2017, Taschenbuch, neu.
Lieferung aus: Deutschland, Versandkostenfrei.
Von Händler/Antiquariat, Agrios-Buch [57449362], Bergisch Gladbach, Germany.
Neuware - Due to the increasing advancements in power devices, especially in Insulated Gate Bipolar Transistors (IGBT) technology, switching of kV and kA within mis is possible. Thereby a dissipation power up to 400W per chip is generated. Compared to the switched power, the dissipated power is still marginal. However, considering the area within this power is generated ( 2cm2), a significant heat density and thus high temperature especially within the chip is generated. To keep the maximal junction temperature (Tj,max) within the allowed range, reliable, thermally convenient packaging and interconnection concepts are necessary. Furthermore, power devices find increasingly application in automobile industry, where they have to fulfil high reliability requirements under harsh environmental conditions during their service lifetime of approx. 15 years. 136 pp. Englisch.
Von Händler/Antiquariat, Agrios-Buch [57449362], Bergisch Gladbach, Germany.
Neuware - Due to the increasing advancements in power devices, especially in Insulated Gate Bipolar Transistors (IGBT) technology, switching of kV and kA within mis is possible. Thereby a dissipation power up to 400W per chip is generated. Compared to the switched power, the dissipated power is still marginal. However, considering the area within this power is generated ( 2cm2), a significant heat density and thus high temperature especially within the chip is generated. To keep the maximal junction temperature (Tj,max) within the allowed range, reliable, thermally convenient packaging and interconnection concepts are necessary. Furthermore, power devices find increasingly application in automobile industry, where they have to fulfil high reliability requirements under harsh environmental conditions during their service lifetime of approx. 15 years. 136 pp. Englisch.
2
Life-Time Estimation of Modern Power Electronics Devices
DE PB NW
ISBN: 9783330852563 bzw. 3330852569, in Deutsch, Noor Publishing, Taschenbuch, neu.
Lieferung aus: Deutschland, Versandkosten nach: Deutschland, Versandkostenfrei.
Von Händler/Antiquariat, Buchhandlung Hoffmann, [3174608].
Neuware - Due to the increasing advancements in power devices, especially in Insulated Gate Bipolar Transistors (IGBT) technology, switching of kV and kA within mis is possible. Thereby a dissipation power up to 400W per chip is generated. Compared to the switched power, the dissipated power is still marginal. However, considering the area within this power is generated ( 2cm2), a significant heat density and thus high temperature especially within the chip is generated. To keep the maximal junction temperature (Tj,max) within the allowed range, reliable, thermally convenient packaging and interconnection concepts are necessary. Furthermore, power devices find increasingly application in automobile industry, where they have to fulfil high reliability requirements under harsh environmental conditions during their service lifetime of approx. 15 years. Taschenbuch, Neuware, 220x150x8 mm, 219g.
Von Händler/Antiquariat, Buchhandlung Hoffmann, [3174608].
Neuware - Due to the increasing advancements in power devices, especially in Insulated Gate Bipolar Transistors (IGBT) technology, switching of kV and kA within mis is possible. Thereby a dissipation power up to 400W per chip is generated. Compared to the switched power, the dissipated power is still marginal. However, considering the area within this power is generated ( 2cm2), a significant heat density and thus high temperature especially within the chip is generated. To keep the maximal junction temperature (Tj,max) within the allowed range, reliable, thermally convenient packaging and interconnection concepts are necessary. Furthermore, power devices find increasingly application in automobile industry, where they have to fulfil high reliability requirements under harsh environmental conditions during their service lifetime of approx. 15 years. Taschenbuch, Neuware, 220x150x8 mm, 219g.
3
Life-Time Estimation of Modern Power Electronics Devices - Power cycling capability of advanced packaging and interconnection technologies at high temperature swings (2017)
DE PB NW
ISBN: 9783330852563 bzw. 3330852569, in Deutsch, Noor Publishing, Taschenbuch, neu.
Lieferung aus: Deutschland, Versandkosten nach: Deutschland, Versandkostenfrei.
Von Händler/Antiquariat, Syndikat Buchdienst, [4235284].
Due to the increasing advancements in power devices, especially in Insulated Gate Bipolar Transistors (IGBT) technology, switching of kV and kA within mis is possible. Thereby a dissipation power up to 400W per chip is generated. Compared to the switched power, the dissipated power is still marginal. However, considering the area within this power is generated ( 2cm2), a significant heat density and thus high temperature especially within the chip is generated. To keep the maximal junction temperature (Tj,max) within the allowed range, reliable, thermally convenient packaging and interconnection concepts are necessary. Furthermore, power devices find increasingly application in automobile industry, where they have to fulfil high reliability requirements under harsh environmental conditions during their service lifetime of approx. 15 years. Taschenbuch / Paperback, Neuware, H: 220mm, B: 150mm.
Von Händler/Antiquariat, Syndikat Buchdienst, [4235284].
Due to the increasing advancements in power devices, especially in Insulated Gate Bipolar Transistors (IGBT) technology, switching of kV and kA within mis is possible. Thereby a dissipation power up to 400W per chip is generated. Compared to the switched power, the dissipated power is still marginal. However, considering the area within this power is generated ( 2cm2), a significant heat density and thus high temperature especially within the chip is generated. To keep the maximal junction temperature (Tj,max) within the allowed range, reliable, thermally convenient packaging and interconnection concepts are necessary. Furthermore, power devices find increasingly application in automobile industry, where they have to fulfil high reliability requirements under harsh environmental conditions during their service lifetime of approx. 15 years. Taschenbuch / Paperback, Neuware, H: 220mm, B: 150mm.
4
Life-Time Estimation of Modern Power Electronics Devices - Power cycling capability of advanced packaging and interconnection technologies at high temperature swings
~EN PB NW
ISBN: 9783330852563 bzw. 3330852569, vermutlich in Englisch, Noor Publishing, Taschenbuch, neu.
Lieferung aus: Deutschland, Versandkostenfrei.
Life-Time Estimation of Modern Power Electronics Devices: Due to the increasing advancements in power devices, especially in Insulated Gate Bipolar Transistors (IGBT) technology, switching of kV and kA within mis is possible. Thereby a dissipation power up to 400W per chip is generated. Compared to the switched power, the dissipated power is still marginal. However, considering the area within this power is generated ( 2cm2), a significant heat density and thus high temperature especially within the chip is generated. To keep the maximal junction temperature (Tj,max) within the allowed range, reliable, thermally convenient packaging and interconnection concepts are necessary. Furthermore, power devices find increasingly application in automobile industry, where they have to fulfil high reliability requirements under harsh environmental conditions during their service lifetime of approx. 15 years. Englisch, Taschenbuch.
Life-Time Estimation of Modern Power Electronics Devices: Due to the increasing advancements in power devices, especially in Insulated Gate Bipolar Transistors (IGBT) technology, switching of kV and kA within mis is possible. Thereby a dissipation power up to 400W per chip is generated. Compared to the switched power, the dissipated power is still marginal. However, considering the area within this power is generated ( 2cm2), a significant heat density and thus high temperature especially within the chip is generated. To keep the maximal junction temperature (Tj,max) within the allowed range, reliable, thermally convenient packaging and interconnection concepts are necessary. Furthermore, power devices find increasingly application in automobile industry, where they have to fulfil high reliability requirements under harsh environmental conditions during their service lifetime of approx. 15 years. Englisch, Taschenbuch.
5
Symbolbild
Life-Time Estimation of Modern Power Electronics Devices
DE NW
ISBN: 9783330852563 bzw. 3330852569, in Deutsch, neu.
Lieferung aus: Deutschland, Lieferzeit: 7 Tage.
Due to the increasing advancements in power devices, especially in Insulated Gate Bipolar Transistors (IGBT) technology, switching of kV and kA within mis is possible. Thereby a dissipation power up to 400W per chip is generated. Compared to the switched power, the dissipated power is still marginal. However, considering the area within this power is generated ( 2cm2), a significant heat density and thus high temperature especially within the chip is generated. To keep the maximal junction temperature (Tj,max) within the allowed range, reliable, thermally convenient packaging and interconnection concepts are necessary. Furthermore, power devices find increasingly application in automobile industry, where they have to fulfil high reliability requirements under harsh environmental conditions during their service lifetime of approx. 15 years.
Due to the increasing advancements in power devices, especially in Insulated Gate Bipolar Transistors (IGBT) technology, switching of kV and kA within mis is possible. Thereby a dissipation power up to 400W per chip is generated. Compared to the switched power, the dissipated power is still marginal. However, considering the area within this power is generated ( 2cm2), a significant heat density and thus high temperature especially within the chip is generated. To keep the maximal junction temperature (Tj,max) within the allowed range, reliable, thermally convenient packaging and interconnection concepts are necessary. Furthermore, power devices find increasingly application in automobile industry, where they have to fulfil high reliability requirements under harsh environmental conditions during their service lifetime of approx. 15 years.
6
Symbolbild
Life-Time Estimation of Modern Power Electronics Devices
~EN NW AB
ISBN: 9783330852563 bzw. 3330852569, vermutlich in Englisch, neu, Hörbuch.
Lieferung aus: Niederlande, Lieferzeit: 5 Tage, zzgl. Versandkosten.
Due to the increasing advancements in power devices, especially in Insulated Gate Bipolar Transistors (IGBT) technology, switching of kV and kA within mis is possible. Thereby a dissipation power up to 400W per chip is generated. Compared to the switched power, the dissipated power is still marginal. However, considering the area within this power is generated ( 2cm2), a significant heat density and thus high temperature especially within the chip is generated. To keep the maximal junction temperature (Tj,max) within the allowed range, reliable, thermally convenient packaging and interconnection concepts are necessary. Furthermore, power devices find increasingly application in automobile industry, where they have to fulfil high reliability requirements under harsh environmental conditions during their service lifetime of approx. 15 years.
Due to the increasing advancements in power devices, especially in Insulated Gate Bipolar Transistors (IGBT) technology, switching of kV and kA within mis is possible. Thereby a dissipation power up to 400W per chip is generated. Compared to the switched power, the dissipated power is still marginal. However, considering the area within this power is generated ( 2cm2), a significant heat density and thus high temperature especially within the chip is generated. To keep the maximal junction temperature (Tj,max) within the allowed range, reliable, thermally convenient packaging and interconnection concepts are necessary. Furthermore, power devices find increasingly application in automobile industry, where they have to fulfil high reliability requirements under harsh environmental conditions during their service lifetime of approx. 15 years.
7
Life-Time Estimation of Modern Power Electronics Devices
~EN PB NW
ISBN: 3330852569 bzw. 9783330852563, vermutlich in Englisch, Noor Publishing, Taschenbuch, neu.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
8
Life-Time Estimation of Modern Power Electronics Devices
~EN NW
ISBN: 3330852569 bzw. 9783330852563, vermutlich in Englisch, neu.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
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