Fabrication of a Solar Cell from Thin Films using Solution Techinique
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Von Händler/Antiquariat, The Book Depository EURO [60485773], London, United Kingdom.
Language: English Brand New Book ***** Print on Demand *****.Scholarly Research Paper from the year 2012 in the subject Energy Sciences, grade: B, course: Material Engineering Technology, language: English, comment: This is a research project report leading to a Master of Science Degree in Electronics and Instrumentation of Kenyatta University., abstract: In this work, n-type CdxZn1-xS and p-type PbS layers were optimized through chemical solution technique for solar cells. CdxZn1-xS was grown at 820 C while PbS was grown at room temperature utilizing aqueous conditions. Optical constants suitable for solar cells fabrication were investigated. CdxZn1-xS films had a band gap varying from 2.47eV (x = 0.6) to 2.72 eV (x = 1.0), transmittance above 79 in VIS - NIR region with resistivity range of 9.5x101 to 1.22x 102 -cm. PbS had a band gap of 0.89 eV, transmittance below 55 with a resistivity range of 6.78 x 103 to 1.26 x 104 -cm appropriate for solar cell absorber layers. Their solar cell had a short circuit current, Isc = 0.031A, open voltage, Voc = 0.37 V, efficiency, = 0.9 with a fill factor, ff = 0.66.

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Scholarly Research Paper from the year 2012 in the subject Energy Sciences, grade: B, course: Material Engineering Technology, language: English, comment: This is a research project report leading to a Master of Science Degree in Electronics and Instrumentation of Kenyatta University. , abstract: In this work, n-type CdxZn1-xS and p-type PbS layers were optimized through chemical solution technique for solar cells. CdxZn1-xS was grown at 820 C while PbS was grown at room temperature utilizing aqueous conditions. Optical constants suitable for solar cells fabrication were investigated. CdxZn1-xS films had a band gap varying from 2.47eV (x = 0.6) to 2.72 eV (x = 1.0), transmittance above 79% in VIS - NIR region with resistivity range of 9.5×101 to 1.22× 102 -cm. PbS had a band gap of 0.89 eV, transmittance below 55% with a resistivity range of 6.78 × 103 to 1.26 × 104 -cm appropriate for solar cell absorber layers. Their solar cell had a short circuit current, Isc = 0.031A, open voltage, Voc = 0.37 V, efficiency, = 0.9% with a fill factor, ff = 0.66.

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This item is printed on demand - Print on Demand Titel. Neuware - 16 pp. Englisch.

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John Okumu, Cliff Orori Mosiori, Walter Kamande Njoroge,Paperback, English-language edition,Pub by GRIN Verlag GmbH.

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