Germanium-on-Insulator heterostructures via crystalline oxide buffers: Growth mode, structural, morphological and compositional properties of the Ge / cubic Pr2O3 / Si(111) heterostructure
8 Angebote vergleichen
| Preise | 2013 | 2014 | 2015 | 2019 |
|---|---|---|---|---|
| Schnitt | Fr. 65.69 (€ 67.12)¹ | Fr. 80.84 (€ 82.60)¹ | Fr. 79.14 (€ 80.86)¹ | Fr. 65.11 (€ 66.53)¹ |
| Nachfrage |
1
Symbolbild
Germanium-On-Insulator Heterostructures Via Crystalline Oxide Buffers (2015)
DE PB NWISBN: 9783659355547 bzw. 3659355542, in Deutsch, LAP LAMBERT ACADEMIC PUB 01/03/2015, Taschenbuch, neu.
Von Händler/Antiquariat, Paperbackshop-US [8408184], Secaucus, NJ, U.S.A.
New Book. Shipped from US within 10 to 14 business days. Established seller since 2000. This item is printed on demand.
New Book. Shipped from US within 10 to 14 business days. Established seller since 2000. This item is printed on demand.
2
Symbolbild
Germanium-on-Insulator heterostructures via crystalline oxide buffers: Growth mode, structural, morphological and compositional properties of the Ge cubic Pr2O3 Si(111) heterostructure
DE PB NWISBN: 9783659355547 bzw. 3659355542, in Deutsch, Taschenbuch, neu.
Von Händler/Antiquariat, BuySomeBooks [52360437], Las Vegas, NV, U.S.A.
This item is printed on demand. Paperback. Germanium-on-Insulator (GeOI) substrates combine the potential of the Silicon-on-Insulator (SOI) technology with the superior properties of Ge over Si in terms of a) charge carrier mobility (relevant for CMOS), b) optical bandgap and absorption coefficient (of impact for infra-red photodetectors and high-bandwidth optical interconnects), and c) lattice and thermal match with GaAs (of interest for integration of III-V based optoelectronics and photovoltaics on the mainstream Si platform). In this thesis, GeOI heterostructures were fabricated by molecular beam epitaxy on Si(111) wafers, employing praseodymium oxide ultra-thin films as a lattice intermediary and barrier. Growth mode, crystalline quality and defect density of the Ge epitaxial layers were investigated by means of a variety of in situ and ex situ methods, including sophisticated synchrotron x-ray diffraction techniques. The achievements are presented and discussed with respect to state-of-the-art GeOI technology. This work not only contributes to the vast field of Ge integration on Si, but could also be of interest to any material scientist dealing more generally with heteroepitaxy issues. This item ships from La Vergne,TN.
This item is printed on demand. Paperback. Germanium-on-Insulator (GeOI) substrates combine the potential of the Silicon-on-Insulator (SOI) technology with the superior properties of Ge over Si in terms of a) charge carrier mobility (relevant for CMOS), b) optical bandgap and absorption coefficient (of impact for infra-red photodetectors and high-bandwidth optical interconnects), and c) lattice and thermal match with GaAs (of interest for integration of III-V based optoelectronics and photovoltaics on the mainstream Si platform). In this thesis, GeOI heterostructures were fabricated by molecular beam epitaxy on Si(111) wafers, employing praseodymium oxide ultra-thin films as a lattice intermediary and barrier. Growth mode, crystalline quality and defect density of the Ge epitaxial layers were investigated by means of a variety of in situ and ex situ methods, including sophisticated synchrotron x-ray diffraction techniques. The achievements are presented and discussed with respect to state-of-the-art GeOI technology. This work not only contributes to the vast field of Ge integration on Si, but could also be of interest to any material scientist dealing more generally with heteroepitaxy issues. This item ships from La Vergne,TN.
3
Symbolbild
Germanium-on-Insulator heterostructures via crystalline oxide buffers (2013)
DE PB NW RPISBN: 9783659355547 bzw. 3659355542, in Deutsch, Taschenbuch, neu, Nachdruck.
Von Händler/Antiquariat, AHA-BUCH GmbH [51283250], Einbeck, NDS, Germany.
This item is printed on demand - Print on Demand Titel. Neuware - 204 pp. Englisch.
This item is printed on demand - Print on Demand Titel. Neuware - 204 pp. Englisch.
4
Symbolbild
Germanium-on-Insulator heterostructures via crystalline oxide buffers (2013)
DE PB NW RPISBN: 9783659355547 bzw. 3659355542, in Deutsch, Lap Lambert Academic Publishing Jul 2013, Taschenbuch, neu, Nachdruck.
Von Händler/Antiquariat, AHA-BUCH GmbH [51283250], Einbeck, Germany.
This item is printed on demand - Print on Demand Titel. Neuware - 204 pp. Englisch.
This item is printed on demand - Print on Demand Titel. Neuware - 204 pp. Englisch.
5
Symbolbild
Germanium-on-Insulator heterostructures via crystalline oxide buffers (2013)
DE PB NW RPISBN: 9783659355547 bzw. 3659355542, in Deutsch, LAP Lambert Academic Publishing, Taschenbuch, neu, Nachdruck.
Von Händler/Antiquariat, English-Book-Service - A Fine Choice [1048135], Waldshut-Tiengen, Germany.
This item is printed on demand for shipment within 3 working days.
This item is printed on demand for shipment within 3 working days.
6
Germanium-on-Insulator heterostructures via crystalline oxide buffers - Growth mode, structural, morphological and compositional properties of the Ge / cubic Pr2O3 / Si(111) heterostructure
~EN PB NWISBN: 9783659355547 bzw. 3659355542, vermutlich in Englisch, LAP Lambert Academic Publishing, Taschenbuch, neu.
Lieferung aus: Deutschland, Versandkostenfrei.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
7
Germanium-on-Insulator heterostructures via crystalline oxide buffers
~EN NW ABISBN: 9783659355547 bzw. 3659355542, vermutlich in Englisch, neu, Hörbuch.
Lieferung aus: Deutschland, Lieferzeit: 5 Tage.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
8
Germanium-on-Insulator heterostructures via cry
~EN PB NWISBN: 9783659355547 bzw. 3659355542, vermutlich in Englisch, Taschenbuch, neu.
Lieferung aus: Deutschland, Next Day, Versandkostenfrei.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
Lade…