Studies on structural and dielectric properties of β-Ga2O3 thin films
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Von Händler/Antiquariat, AHA-BUCH GmbH [51283250], Einbeck, Germany.
This item is printed on demand - Print on Demand Neuware - In this study we report on structural and electric properties of beta-Ga2O3 on Si and GaN substrates. Since Ga2O3 has a band-gap of 4.8 eV at room temperature and a dielectric constant of 10.2~14.2, Ga2O3 can be a potential candidate dielectrics for MIS devices. beta-Ga2O3 has been deposited using various techniques such as radio-frequency sputtering, plasma enhanced atomic layer deposition (PEALD), and pulsed laser deposition (PLD). In particular, epitaxial Ga2O3 thin films grown on n-GaN/Al2O3 substrate by PLD technique have a monoclinc beta-Ga2O3 phase and peaks were indexed as (-2 0 1) and higher order diffractions. Optical transmittance of the epitaxial beta-Ga2O3 film was more than 90% from UV to visible spectral regions and the optical band-gap of the beta-Ga2O3 was calculated to be about 4.8 eV. Moreover, we have fabricated MFIS capacitors using Ga2O3 and Ba0.5Sr0.5TiO3 (BST) thin films on GaN/Al2O3 substrate by pulsed laser deposition. The epitaxial growth, structural analysis, and dielectric properties of the Ga2O3 films and BST thin films will be discussed. 136 pp. Englisch.

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Studies on structural and dielectric properties of ?-Ga2O3 thin films: In this study we report on structural and electric properties of beta-Ga2O3 on Si and GaN substrates. Since Ga2O3 has a band-gap of 4.8 eV at room temperature and a dielectric constant of 10.2~14.2, Ga2O3 can be a potential candidate dielectrics for MIS devices. beta-Ga2O3 has been deposited using various techniques such as radio-frequency sputtering, plasma enhanced atomic layer deposition (PEALD), and pulsed laser deposition (PLD). In particular, epitaxial Ga2O3 thin films grown on n-GaN/Al2O3 substrate by PLD technique have a monoclinc beta-Ga2O3 phase and peaks were indexed as (-2 0 1) and higher order diffractions. Optical transmittance of the epitaxial beta-Ga2O3 film was more than 90% from UV to visible spectral regions and the optical band-gap of the beta-Ga2O3 was calculated to be about 4.8 eV. Moreover, we have fabricated MFIS capacitors using Ga2O3 and Ba0.5Sr0.5TiO3 (BST) thin films on GaN/Al2O3 substrate by pulsed laser deposition. The epitaxial growth, structural analysis, and dielectric properties of the Ga2O3 films and BST thin films will be discussed. Englisch, Taschenbuch.

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In this study we report on structural and electric properties of beta-Ga2O3 on Si and GaN substrates. Since Ga2O3 has a band-gap of 4.8 eV at room temperature and a dielectric constant of 10.2~14.2, Ga2O3 can be a potential candidate dielectrics for MIS devices. beta-Ga2O3 has been deposited using various techniques such as radio-frequency sputtering, plasma enhanced atomic layer deposition (PEALD), and pulsed laser deposition (PLD). In particular, epitaxial Ga2O3 thin films grown on n-GaN/Al2O3 substrate by PLD technique have a monoclinc beta-Ga2O3 phase and peaks were indexed as (-2 0 1) and higher order diffractions. Optical transmittance of the epitaxial beta-Ga2O3 film was more than 90% from UV to visible spectral regions and the optical band-gap of the beta-Ga2O3 was calculated to be about 4.8 eV. Moreover, we have fabricated MFIS capacitors using Ga2O3 and Ba0.5Sr0.5TiO3 (BST) thin films on GaN/Al2O3 substrate by pulsed laser deposition. The epitaxial growth, structural analysis, and dielectric properties of the Ga2O3 films and BST thin films will be discussed.

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Von Händler/Antiquariat, Syndikat Buchdienst, [4235284].
In this study we report on structural and electric properties of beta-Ga2O3 on Si and GaN substrates. Since Ga2O3 has a band-gap of 4.8 eV at room temperature and a dielectric constant of 10.214.2, Ga2O3 can be a potential candidate dielectrics for MIS devices. beta-Ga2O3 has been deposited using various techniques such as radio-frequency sputtering, plasma enhanced atomic layer deposition (PEALD), and pulsed laser deposition (PLD). In particular, epitaxial Ga2O3 thin films grown on n-GaN/Al2O3 substrate by PLD technique have a monoclinc beta-Ga2O3 phase and peaks were indexed as (-2 0 1) and higher order diffractions. Optical transmittance of the epitaxial beta-Ga2O3 film was more than 90% from UV to visible spectral regions and the optical band-gap of the beta-Ga2O3 was calculated to be about 4.8 eV. Moreover, we have fabricated MFIS capacitors using Ga2O3 and Ba0.5Sr0.5TiO3 (BST) thin films on GaN/Al2O3 substrate by pulsed laser deposition. The epitaxial growth, structural analysis, and dielectric properties of the Ga2O3 films and BST thin films will be discussed. 2014, Taschenbuch / Paperback, Neuware, H: 220mm, B: 150mm, 136, Internationaler Versand, Selbstabholung und Barzahlung, PayPal, offene Rechnung, Banküberweisung.

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