MBE growth of Nitride-Arsenides for long wavelength opto-electronics - 1.3 um emission and absorption on GaAs substrates using GaInNAs. Optimization of material quality
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1
MBE Growth of Nitride-Arsenides for Long Wavelength Opto-Electronics (2015)
DE PB NW
ISBN: 9783659677069 bzw. 365967706X, in Deutsch, Lap Lambert Academic Publishing, Taschenbuch, neu.
Lieferung aus: Niederlande, 5-7 werkdagen.
bol.com.
To enable devices operating at 1.3 um on GaAs, MBE growth of a new III-V material formed by adding small amounts of nitrogen to InGaAs was developed. The growth of GaInNAs is complicated by the divergent properties of the alloy constituents and the difficulty of generating a reactive nitrogen species. To avoid phase segregation, nitride-arsenides must be grown at relatively low temperatures and high arsenic overpressures. Device quality material is obtained only after a rapid thermal anneal at 7... To enable devices operating at 1.3 um on GaAs, MBE growth of a new III-V material formed by adding small amounts of nitrogen to InGaAs was developed. The growth of GaInNAs is complicated by the divergent properties of the alloy constituents and the difficulty of generating a reactive nitrogen species. To avoid phase segregation, nitride-arsenides must be grown at relatively low temperatures and high arsenic overpressures. Device quality material is obtained only after a rapid thermal anneal at 760 C for 1 min. Nuclear reaction channeling measurements show that as-grown nitride-arsenides contain a considerable amount of interstitial nitrogen and that a substantial fraction of the non-substitutional nitrogen disappears during anneal. Secondary ion mass spectroscopy depth profiling on GaInNAs quantum wells shows that during anneal, the nitrogen diffusion is more pronounced than indium diffusion. To limit nitrogen diffusion, the GaInNAs QWs were inserted between GaAsN barriers. This also resulted in longer wavelength emission due to decreased carrier confinement energy. This new active region resulted in devices emitting at 1.3 um."Taal: Engels;Afmetingen: 7x229x152 mm;Gewicht: 177,00 gram;Verschijningsdatum: februari 2015;ISBN10: 365967706X;ISBN13: 9783659677069; Engelstalig | Paperback | 2015.
bol.com.
To enable devices operating at 1.3 um on GaAs, MBE growth of a new III-V material formed by adding small amounts of nitrogen to InGaAs was developed. The growth of GaInNAs is complicated by the divergent properties of the alloy constituents and the difficulty of generating a reactive nitrogen species. To avoid phase segregation, nitride-arsenides must be grown at relatively low temperatures and high arsenic overpressures. Device quality material is obtained only after a rapid thermal anneal at 7... To enable devices operating at 1.3 um on GaAs, MBE growth of a new III-V material formed by adding small amounts of nitrogen to InGaAs was developed. The growth of GaInNAs is complicated by the divergent properties of the alloy constituents and the difficulty of generating a reactive nitrogen species. To avoid phase segregation, nitride-arsenides must be grown at relatively low temperatures and high arsenic overpressures. Device quality material is obtained only after a rapid thermal anneal at 760 C for 1 min. Nuclear reaction channeling measurements show that as-grown nitride-arsenides contain a considerable amount of interstitial nitrogen and that a substantial fraction of the non-substitutional nitrogen disappears during anneal. Secondary ion mass spectroscopy depth profiling on GaInNAs quantum wells shows that during anneal, the nitrogen diffusion is more pronounced than indium diffusion. To limit nitrogen diffusion, the GaInNAs QWs were inserted between GaAsN barriers. This also resulted in longer wavelength emission due to decreased carrier confinement energy. This new active region resulted in devices emitting at 1.3 um."Taal: Engels;Afmetingen: 7x229x152 mm;Gewicht: 177,00 gram;Verschijningsdatum: februari 2015;ISBN10: 365967706X;ISBN13: 9783659677069; Engelstalig | Paperback | 2015.
2
MBE growth of Nitride-Arsenides for long wavelength opto-electronics
~EN NW AB
ISBN: 9783659677069 bzw. 365967706X, vermutlich in Englisch, neu, Hörbuch.
Lieferung aus: Deutschland, zwischen 5 - 7 Werktagen.
To enable devices operating at 1.3 um on GaAs, MBE growth of a new III-V material formed by adding small amounts of nitrogen to InGaAs was developed. The growth of GaInNAs is complicated by the divergent properties of the alloy constituents and the difficulty of generating a reactive nitrogen species. To avoid phase segregation, nitride-arsenides must be grown at relatively low temperatures and high arsenic overpressures. Device quality material is obtained only after a rapid thermal anneal at 760 °C for 1 min. Nuclear reaction channeling measurements show that as-grown nitride-arsenides contain a considerable amount of interstitial nitrogen and that a substantial fraction of the non-substitutional nitrogen disappears during anneal. Secondary ion mass spectroscopy depth profiling on GaInNAs quantum wells shows that during anneal, the nitrogen diffusion is more pronounced than indium diffusion. To limit nitrogen diffusion, the GaInNAs QWs were inserted between GaAsN barriers. This also resulted in longer wavelength emission due to decreased carrier confinement energy. This new active region resulted in devices emitting at 1.3 um.
To enable devices operating at 1.3 um on GaAs, MBE growth of a new III-V material formed by adding small amounts of nitrogen to InGaAs was developed. The growth of GaInNAs is complicated by the divergent properties of the alloy constituents and the difficulty of generating a reactive nitrogen species. To avoid phase segregation, nitride-arsenides must be grown at relatively low temperatures and high arsenic overpressures. Device quality material is obtained only after a rapid thermal anneal at 760 °C for 1 min. Nuclear reaction channeling measurements show that as-grown nitride-arsenides contain a considerable amount of interstitial nitrogen and that a substantial fraction of the non-substitutional nitrogen disappears during anneal. Secondary ion mass spectroscopy depth profiling on GaInNAs quantum wells shows that during anneal, the nitrogen diffusion is more pronounced than indium diffusion. To limit nitrogen diffusion, the GaInNAs QWs were inserted between GaAsN barriers. This also resulted in longer wavelength emission due to decreased carrier confinement energy. This new active region resulted in devices emitting at 1.3 um.
3
MBE Growth of Nitride-Arsenides for Long Wavelength Opto-Electronics (2015)
EN PB NW
ISBN: 9783659677069 bzw. 365967706X, in Englisch, 112 Seiten, LAP Lambert Academic Publishing, Taschenbuch, neu.
New from: INR 3,127.00 (7 Offers)
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Lieferung aus: Indien, Usually dispatched within 6-10 business days, zzgl. Versandkosten (wenn der Anbieter in Ihr Land liefert).
Von Händler/Antiquariat, B2A UK.
To enable devices operating at 1.3 um on GaAs, MBE growth of a new III-V material formed by adding small amounts of nitrogen to InGaAs was developed. The growth of GaInNAs is complicated by the divergent properties of the alloy constituents and the difficulty of generating a reactive nitrogen species. To avoid phase segregation, nitride-arsenides must be grown at relatively low temperatures and high arsenic overpressures. Device quality material is obtained only after a rapid thermal anneal at 760 C for 1 min. Nuclear reaction channeling measurements show that as-grown nitride-arsenides contain a considerable amount of interstitial nitrogen and that a substantial fraction of the non-substitutional nitrogen disappears during anneal. Secondary ion mass spectroscopy depth profiling on GaInNAs quantum wells shows that during anneal, the nitrogen diffusion is more pronounced than indium diffusion. To limit nitrogen diffusion, the GaInNAs QWs were inserted between GaAsN barriers. This also resulted in longer wavelength emission due to decreased carrier confinement energy. This new active region resulted in devices emitting at 1.3 um.", Paperback, Format: Import, Label: LAP Lambert Academic Publishing, LAP Lambert Academic Publishing, Product group: Book, Published: 2015-02-20, Studio: LAP Lambert Academic Publishing.
Von Händler/Antiquariat, B2A UK.
To enable devices operating at 1.3 um on GaAs, MBE growth of a new III-V material formed by adding small amounts of nitrogen to InGaAs was developed. The growth of GaInNAs is complicated by the divergent properties of the alloy constituents and the difficulty of generating a reactive nitrogen species. To avoid phase segregation, nitride-arsenides must be grown at relatively low temperatures and high arsenic overpressures. Device quality material is obtained only after a rapid thermal anneal at 760 C for 1 min. Nuclear reaction channeling measurements show that as-grown nitride-arsenides contain a considerable amount of interstitial nitrogen and that a substantial fraction of the non-substitutional nitrogen disappears during anneal. Secondary ion mass spectroscopy depth profiling on GaInNAs quantum wells shows that during anneal, the nitrogen diffusion is more pronounced than indium diffusion. To limit nitrogen diffusion, the GaInNAs QWs were inserted between GaAsN barriers. This also resulted in longer wavelength emission due to decreased carrier confinement energy. This new active region resulted in devices emitting at 1.3 um.", Paperback, Format: Import, Label: LAP Lambert Academic Publishing, LAP Lambert Academic Publishing, Product group: Book, Published: 2015-02-20, Studio: LAP Lambert Academic Publishing.
4
MBE Growth of Nitride-Arsenides for Long Wavelength Opto-Electronics (2015)
EN PB NW
ISBN: 9783659677069 bzw. 365967706X, in Englisch, 112 Seiten, LAP Lambert Academic Publishing, Taschenbuch, neu.
New from: CDN$ 45.43 (5 Offers)
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Lieferung aus: Kanada, Usually ships within 1 - 2 business days.
Von Händler/Antiquariat, Book Depository CA.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
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NEW Mbe Growth of Nitride-arsenides for Long Wavelength Opto-electronics by Spru
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ISBN: 9783659677069 bzw. 365967706X, in Englisch, neu.
Lieferung aus: Vereinigte Staaten von Amerika, Lieferart: Free, Lieferung: Weltweit, Artikelstandort: 45014 Fairfield,OH,USA, Versandkostenfrei.
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