Role of Annealing on the Interface Engineering in Ge MOS devices
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Schnitt | Fr. 35.03 (€ 35.90)¹ | Fr. 35.03 (€ 35.90)¹ | Fr. 33.72 (€ 34.56)¹ |
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1
Role of Annealing on the Interface Engineering in Ge MOS devices - Role of Annealing on the Interface Engineering
DE PB NW
ISBN: 9783659684852 bzw. 3659684856, in Deutsch, LAP Lambert Academic Publishing, Taschenbuch, neu.
Lieferung aus: Deutschland, Versandkostenfrei.
Role of Annealing on the Interface Engineering in Ge MOS devices: High permittivity dielectrics and suitable substrates are studies intensively in the view of their use in VLSI design. However, hafnium oxide (HfO2) is a promising candidate for the next generation of gate dielectrics due to its relatively high dielectric constant 25 , wide bandgap, good thermal stability, and relatively high free energy of reaction with the substrate material. Recently, Ge-based electronic devices have regained considerable attention and Ge can provide solutions to major problems that Si technology is facing for advanced CMOS devices this is mainly due to the higher mo-bility of both the holes and the electrons in Ge substrate. Hence this book is useful for the readers to knew some significant issue on Ge technology for high frequency devices. Englisch, Taschenbuch.
Role of Annealing on the Interface Engineering in Ge MOS devices: High permittivity dielectrics and suitable substrates are studies intensively in the view of their use in VLSI design. However, hafnium oxide (HfO2) is a promising candidate for the next generation of gate dielectrics due to its relatively high dielectric constant 25 , wide bandgap, good thermal stability, and relatively high free energy of reaction with the substrate material. Recently, Ge-based electronic devices have regained considerable attention and Ge can provide solutions to major problems that Si technology is facing for advanced CMOS devices this is mainly due to the higher mo-bility of both the holes and the electrons in Ge substrate. Hence this book is useful for the readers to knew some significant issue on Ge technology for high frequency devices. Englisch, Taschenbuch.
2
Role of Annealing on the Interface Engineering in Ge MOS devices
~EN NW AB
ISBN: 9783659684852 bzw. 3659684856, vermutlich in Englisch, neu, Hörbuch.
Lieferung aus: Deutschland, Lieferzeit: 11 Tage.
High permittivity dielectrics and suitable substrates are studies intensively in the view of their use in VLSI design. However, hafnium oxide (HfO2) is a promising candidate for the next generation of gate dielectrics due to its relatively high dielectric constant 25 , wide bandgap, good thermal stability, and relatively high free energy of reaction with the substrate material. Recently, Ge-based electronic devices have regained considerable attention and Ge can provide solutions to major problems that Si technology is facing for advanced CMOS devices, this is mainly due to the higher mo-bility of both the holes and the electrons in Ge substrate. Hence this book is useful for the readers to knew some significant issue on Ge technology for high frequency devices.
High permittivity dielectrics and suitable substrates are studies intensively in the view of their use in VLSI design. However, hafnium oxide (HfO2) is a promising candidate for the next generation of gate dielectrics due to its relatively high dielectric constant 25 , wide bandgap, good thermal stability, and relatively high free energy of reaction with the substrate material. Recently, Ge-based electronic devices have regained considerable attention and Ge can provide solutions to major problems that Si technology is facing for advanced CMOS devices, this is mainly due to the higher mo-bility of both the holes and the electrons in Ge substrate. Hence this book is useful for the readers to knew some significant issue on Ge technology for high frequency devices.
3
Role of Annealing on the Interface Engineering in Ge MOS devices
DE HC NW
ISBN: 9783659684852 bzw. 3659684856, in Deutsch, Lap Lambert Academic Publishing, gebundenes Buch, neu.
Lieferung aus: Deutschland, Versandkostenfrei innerhalb von Deutschland.
High permittivity dielectrics and suitable substrates are studies intensively in the view of their use in VLSI design. However, hafnium oxide (HfO2) is a promising candidate for the next generation of gate dielectrics due to its relatively high dielectric constant 25 , wide bandgap, good thermal stability, and relatively high free energy of reaction with the substrate material. Recently, Ge-based electronic devices have regained considerable attention and Ge can provide solutions to major High permittivity dielectrics and suitable substrates are studies intensively in the view of their use in VLSI design. However, hafnium oxide (HfO2) is a promising candidate for the next generation of gate dielectrics due to its relatively high dielectric constant 25 , wide bandgap, good thermal stability, and relatively high free energy of reaction with the substrate material. Recently, Ge-based electronic devices have regained considerable attention and Ge can provide solutions to major problems that Si technology is facing for advanced CMOS devices; this is mainly due to the higher mo-bility of both the holes and the electrons in Ge substrate. Hence this book is useful for the readers to knew some significant issue on Ge technology for high frequency devices. Lieferzeit 1-2 Werktage.
High permittivity dielectrics and suitable substrates are studies intensively in the view of their use in VLSI design. However, hafnium oxide (HfO2) is a promising candidate for the next generation of gate dielectrics due to its relatively high dielectric constant 25 , wide bandgap, good thermal stability, and relatively high free energy of reaction with the substrate material. Recently, Ge-based electronic devices have regained considerable attention and Ge can provide solutions to major High permittivity dielectrics and suitable substrates are studies intensively in the view of their use in VLSI design. However, hafnium oxide (HfO2) is a promising candidate for the next generation of gate dielectrics due to its relatively high dielectric constant 25 , wide bandgap, good thermal stability, and relatively high free energy of reaction with the substrate material. Recently, Ge-based electronic devices have regained considerable attention and Ge can provide solutions to major problems that Si technology is facing for advanced CMOS devices; this is mainly due to the higher mo-bility of both the holes and the electrons in Ge substrate. Hence this book is useful for the readers to knew some significant issue on Ge technology for high frequency devices. Lieferzeit 1-2 Werktage.
6
Role of Annealing on the Interface Engineering in Ge MOS devices
DE PB NW
ISBN: 3659684856 bzw. 9783659684852, in Deutsch, LAP Lambert Academic Publishing, Taschenbuch, neu.
Role of Annealing on the Interface Engineering in Ge MOS devices ab 35.9 € als Taschenbuch: Role of Annealing on the Interface Engineering. Aus dem Bereich: Bücher, Wissenschaft, Technik,.
7
Role of Annealing on the Interface Engineering in Ge MOS devices
~EN PB NW
ISBN: 3659684856 bzw. 9783659684852, vermutlich in Englisch, LAP Lambert Academic Publishing, Taschenbuch, neu.
Role of Annealing on the Interface Engineering in Ge MOS devices ab 35.9 € als Taschenbuch: Role of Annealing on the Interface Engineering. Aus dem Bereich: Bücher, Wissenschaft, Technik,.
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