Study the characteristic of silicon nano-structure prepared by PEC
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Lieferung aus: Schweiz, Versandfertig innert 4 - 7 Werktagen.
Silicon Nano-Structures, In this work, nanostructures porous silicon (PS) layer is fabricated by (PEC) using 650nm laser diode at different illumination power densities for n-type silicon substrate of resistivity (10¿.cm) and HF of 48.5% and ethanol(99%)(1:1). The morphological and optical and electrical properties are studied. These characteristics are studied by using our mathematical model which represents the electrical properties. The electrical properties of porous silicon layer are classify according to the structure properties and we prove that the electrical properties depend on the relative permittivity as this classified. See in the low power density the J-v characteristic which appear non rectifying and porous silicon behave as ohmic-contact, high power density of laser which produce rectifying junction, which has behaved as ohmic-contact and high etching time which behaves like (schottky)Junction while at(200mW/cm2) the junction behavior like (hetrojunction) diode. Taschenbuch, 26.06.2015.

Lieferung aus: Österreich, zzgl. Versandkosten.
Silicon Nano-Structures In this work, nanostructures porous silicon (PS) layer is fabricated by (PEC) using 650nm laser diode at different illumination power densities for n-type silicon substrate of resistivity (10¿.cm) and HF of 48.5% and ethanol(99%)(1:1). The morphological and optical and electrical properties are studied. These characteristics are studied by using our mathematical model which represents the electrical properties. The electrical properties of porous silicon layer are classify according to the structure properties and we prove that the electrical properties depend on the relative permittivity as this classified. See in the low power density the J-v characteristic which appear non rectifying and porous silicon behave as ohmic-contact, high power density of laser which produce rectifying junction, which has behaved as ohmic-contact and high etching time which behaves like (schottky)Junction while at(200mW/cm2) the junction behavior like (hetrojunction) diode. 26.06.2015, Taschenbuch.

Lieferung aus: Deutschland, Versandkostenfrei.
Von Händler/Antiquariat, AHA-BUCH GmbH [51283250], Einbeck, Germany.
This item is printed on demand - Print on Demand Neuware - In this work, nanostructures porous silicon (PS) layer is fabricated by (PEC) using 650nm laser diode at different illumination power densities for n-type silicon substrate of resistivity (10 .cm) and HF of 48.5% and ethanol(99%)(1:1). The morphological and optical and electrical properties are studied. These characteristics are studied by using our mathematical model which represents the electrical properties. The electrical properties of porous silicon layer are classify according to the structure properties and we prove that the electrical properties depend on the relative permittivity as this classified. See in the low power density the J-v characteristic which appear non rectifying and porous silicon behave as ohmic-contact, high power density of laser which produce rectifying junction, which has behaved as ohmic-contact and high etching time which behaves like (schottky)Junction while at(200mW/cm2) the junction behavior like (hetrojunction) diode. 152 pp. Englisch.

Lieferung aus: Deutschland, Lieferzeit: 5 Tage.
In this work, nanostructures porous silicon (PS) layer is fabricated by (PEC) using 650nm laser diode at different illumination power densities for n-type silicon substrate of resistivity (10 .cm) and HF of 48.5% and ethanol(99%)(1:1). The morphological and optical and electrical properties are studied. These characteristics are studied by using our mathematical model which represents the electrical properties. The electrical properties of porous silicon layer are classify according to the structure properties and we prove that the electrical properties depend on the relative permittivity as this classified. See in the low power density the J-v characteristic which appear non rectifying and porous silicon behave as ohmic-contact, high power density of laser which produce rectifying junction, which has behaved as ohmic-contact and high etching time which behaves like (schottky)Junction while at(200mW/cm2) the junction behavior like (hetrojunction) diode.

Lieferung aus: Deutschland, Versandkostenfrei.
Study the characteristic of silicon nano-structure prepared by PEC: In this work, nanostructures porous silicon (PS) layer is fabricated by (PEC) using 650nm laser diode at different illumination power densities for n-type silicon substrate of resistivity (10 .cm) and HF of 48.5% and ethanol(99%)(1:1). The morphological and optical and electrical properties are studied. These characteristics are studied by using our mathematical model which represents the electrical properties. The electrical properties of porous silicon layer are classify according to the structure properties and we prove that the electrical properties depend on the relative permittivity as this classified. See in the low power density the J-v characteristic which appear non rectifying and porous silicon behave as ohmic-contact, high power density of laser which produce rectifying junction, which has behaved as ohmic-contact and high etching time which behaves like (schottky)Junction while at(200mW/cm2) the junction behavior like (hetrojunction) diode. Englisch, Taschenbuch.

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