Techniques to address Last Stage Leakage Recovery and Dynamic IR Drop
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Techniques to address Last Stage Leakage Recovery and Dynamic IR Drop (2015)
DE PB NW RP
ISBN: 9783659713910 bzw. 3659713910, in Deutsch, LAP Lambert Academic Publishing Jun 2015, Taschenbuch, neu, Nachdruck.
Von Händler/Antiquariat, AHA-BUCH GmbH [51283250], Einbeck, Germany.
This item is printed on demand - Print on Demand Titel. Neuware - The leakage power, power integrity challenges due to spare cells and peak IR drop respectively are addressed in this monograph. The scope of the solution proposed lies in the Physical design level near to design closure where optimization tools have tight resources to fix these challenges. However, there is a lot of scope for future work in other areas of low PM spectrum like at circuit level, architectural level, design level and software coding level. Majority of today's semiconductor designers are not moved to very recent techniques like gate array ECO flows using ECO kits provided by library vendors due to efforts involved in modifying existing flows and tight design schedules. The proposed 'Optimal State Assignment' technique can help reducing spare cells leakage without affecting design flows but switching to these new techniques will help in complete leakage power reduction of spare cells. Another possible area for future investigation is to use 65nm, 45nm, 32nm and 28nm libraries for various data flow intensive architectures implementation to validate the proposed 'Selective Glitch Reduction' technique. 116 pp. Englisch.
This item is printed on demand - Print on Demand Titel. Neuware - The leakage power, power integrity challenges due to spare cells and peak IR drop respectively are addressed in this monograph. The scope of the solution proposed lies in the Physical design level near to design closure where optimization tools have tight resources to fix these challenges. However, there is a lot of scope for future work in other areas of low PM spectrum like at circuit level, architectural level, design level and software coding level. Majority of today's semiconductor designers are not moved to very recent techniques like gate array ECO flows using ECO kits provided by library vendors due to efforts involved in modifying existing flows and tight design schedules. The proposed 'Optimal State Assignment' technique can help reducing spare cells leakage without affecting design flows but switching to these new techniques will help in complete leakage power reduction of spare cells. Another possible area for future investigation is to use 65nm, 45nm, 32nm and 28nm libraries for various data flow intensive architectures implementation to validate the proposed 'Selective Glitch Reduction' technique. 116 pp. Englisch.
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Techniques to Address Last Stage Leakage Recovery and Dynamic IR Drop (Paperback) (2015)
DE PB NW RP
ISBN: 9783659713910 bzw. 3659713910, in Deutsch, LAP Lambert Academic Publishing, United States, Taschenbuch, neu, Nachdruck.
Lieferung aus: Vereinigtes Königreich Grossbritannien und Nordirland, Versandkostenfrei.
Von Händler/Antiquariat, The Book Depository EURO [60485773], London, United Kingdom.
Language: English Brand New Book ***** Print on Demand *****.The leakage power, power integrity challenges due to spare cells and peak IR drop respectively are addressed in this monograph. The scope of the solution proposed lies in the Physical design level near to design closure where optimization tools have tight resources to fix these challenges. However, there is a lot of scope for future work in other areas of low PM spectrum like at circuit level, architectural level, design level and software coding level. Majority of today s semiconductor designers are not moved to very recent techniques like gate array ECO flows using ECO kits provided by library vendors due to efforts involved in modifying existing flows and tight design schedules. The proposed Optimal State Assignment technique can help reducing spare cells leakage without affecting design flows but switching to these new techniques will help in complete leakage power reduction of spare cells. Another possible area for future investigation is to use 65nm, 45nm, 32nm and 28nm libraries for various data flow intensive architectures implementation to validate the proposed Selective Glitch Reduction technique.
Von Händler/Antiquariat, The Book Depository EURO [60485773], London, United Kingdom.
Language: English Brand New Book ***** Print on Demand *****.The leakage power, power integrity challenges due to spare cells and peak IR drop respectively are addressed in this monograph. The scope of the solution proposed lies in the Physical design level near to design closure where optimization tools have tight resources to fix these challenges. However, there is a lot of scope for future work in other areas of low PM spectrum like at circuit level, architectural level, design level and software coding level. Majority of today s semiconductor designers are not moved to very recent techniques like gate array ECO flows using ECO kits provided by library vendors due to efforts involved in modifying existing flows and tight design schedules. The proposed Optimal State Assignment technique can help reducing spare cells leakage without affecting design flows but switching to these new techniques will help in complete leakage power reduction of spare cells. Another possible area for future investigation is to use 65nm, 45nm, 32nm and 28nm libraries for various data flow intensive architectures implementation to validate the proposed Selective Glitch Reduction technique.
3
Techniques to address Last Stage Leakage Recovery and Dynamic IR Drop
~EN PB NW
ISBN: 9783659713910 bzw. 3659713910, vermutlich in Englisch, LAP Lambert Academic Publishing, Taschenbuch, neu.
Lieferung aus: Deutschland, Versandkostenfrei.
Techniques to address Last Stage Leakage Recovery and Dynamic IR Drop: The leakage power, power integrity challenges due to spare cells and peak IR drop respectively are addressed in this monograph. The scope of the solution proposed lies in the Physical design level near to design closure where optimization tools have tight resources to fix these challenges. However, there is a lot of scope for future work in other areas of low PM spectrum like at circuit level, architectural level, design level and software coding level. Majority of today`s semiconductor designers are not moved to very recent techniques like gate array ECO flows using ECO kits provided by library vendors due to efforts involved in modifying existing flows and tight design schedules. The proposed `Optimal State Assignment` technique can help reducing spare cells leakage without affecting design flows but switching to these new techniques will help in complete leakage power reduction of spare cells. Another possible area for future investigation is to use 65nm, 45nm, 32nm and 28nm libraries for various data flow intensive architectures implementation to validate the proposed `Selective Glitch Reduction` technique. Englisch, Taschenbuch.
Techniques to address Last Stage Leakage Recovery and Dynamic IR Drop: The leakage power, power integrity challenges due to spare cells and peak IR drop respectively are addressed in this monograph. The scope of the solution proposed lies in the Physical design level near to design closure where optimization tools have tight resources to fix these challenges. However, there is a lot of scope for future work in other areas of low PM spectrum like at circuit level, architectural level, design level and software coding level. Majority of today`s semiconductor designers are not moved to very recent techniques like gate array ECO flows using ECO kits provided by library vendors due to efforts involved in modifying existing flows and tight design schedules. The proposed `Optimal State Assignment` technique can help reducing spare cells leakage without affecting design flows but switching to these new techniques will help in complete leakage power reduction of spare cells. Another possible area for future investigation is to use 65nm, 45nm, 32nm and 28nm libraries for various data flow intensive architectures implementation to validate the proposed `Selective Glitch Reduction` technique. Englisch, Taschenbuch.
4
Symbolbild
Techniques to address Last Stage Leakage Recovery and Dynamic IR Drop
DE NW
ISBN: 9783659713910 bzw. 3659713910, in Deutsch, neu.
Lieferung aus: Deutschland, zzgl. Versandkosten.
The leakage power, power integrity challenges due to spare cells and peak IR drop respectively are addressed in this monograph. The scope of the solution proposed lies in the Physical design level near to design closure where optimization tools have tight resources to fix these challenges. However, there is a lot of scope for future work in other areas of low PM spectrum like at circuit level, architectural level, design level and software coding level. Majority of today's semiconductor designers are not moved to very recent techniques like gate array ECO flows using ECO kits provided by library vendors due to efforts involved in modifying existing flows and tight design schedules. The proposed "Optimal State Assignment" technique can help reducing spare cells leakage without affecting design flows but switching to these new techniques will help in complete leakage power reduction of spare cells. Another possible area for future investigation is to use 65nm, 45nm, 32nm and 28nm libraries for various data flow intensive architectures implementation to validate the proposed "Selective Glitch Reduction" technique.
The leakage power, power integrity challenges due to spare cells and peak IR drop respectively are addressed in this monograph. The scope of the solution proposed lies in the Physical design level near to design closure where optimization tools have tight resources to fix these challenges. However, there is a lot of scope for future work in other areas of low PM spectrum like at circuit level, architectural level, design level and software coding level. Majority of today's semiconductor designers are not moved to very recent techniques like gate array ECO flows using ECO kits provided by library vendors due to efforts involved in modifying existing flows and tight design schedules. The proposed "Optimal State Assignment" technique can help reducing spare cells leakage without affecting design flows but switching to these new techniques will help in complete leakage power reduction of spare cells. Another possible area for future investigation is to use 65nm, 45nm, 32nm and 28nm libraries for various data flow intensive architectures implementation to validate the proposed "Selective Glitch Reduction" technique.
5
Techniques to address Last Stage Leakage Recovery and Dynamic IR Drop
~EN NW AB
ISBN: 9783659713910 bzw. 3659713910, vermutlich in Englisch, neu, Hörbuch.
Lieferung aus: Österreich, Lieferzeit: 5 Tage, zzgl. Versandkosten.
The leakage power, power integrity challenges due to spare cells and peak IR drop respectively are addressed in this monograph. The scope of the solution proposed lies in the Physical design level near to design closure where optimization tools have tight resources to fix these challenges. However, there is a lot of scope for future work in other areas of low PM spectrum like at circuit level, architectural level, design level and software coding level. Majority of today's semiconductor designers are not moved to very recent techniques like gate array ECO flows using ECO kits provided by library vendors due to efforts involved in modifying existing flows and tight design schedules. The proposed "Optimal State Assignment" technique can help reducing spare cells leakage without affecting design flows but switching to these new techniques will help in complete leakage power reduction of spare cells. Another possible area for future investigation is to use 65nm, 45nm, 32nm and 28nm libraries for various data flow intensive architectures implementation to validate the proposed "Selective Glitch Reduction" technique.
The leakage power, power integrity challenges due to spare cells and peak IR drop respectively are addressed in this monograph. The scope of the solution proposed lies in the Physical design level near to design closure where optimization tools have tight resources to fix these challenges. However, there is a lot of scope for future work in other areas of low PM spectrum like at circuit level, architectural level, design level and software coding level. Majority of today's semiconductor designers are not moved to very recent techniques like gate array ECO flows using ECO kits provided by library vendors due to efforts involved in modifying existing flows and tight design schedules. The proposed "Optimal State Assignment" technique can help reducing spare cells leakage without affecting design flows but switching to these new techniques will help in complete leakage power reduction of spare cells. Another possible area for future investigation is to use 65nm, 45nm, 32nm and 28nm libraries for various data flow intensive architectures implementation to validate the proposed "Selective Glitch Reduction" technique.
6
Techniques to address Last Stage Leakage Recovery and Dynamic IR Drop
~EN PB NW
ISBN: 3659713910 bzw. 9783659713910, vermutlich in Englisch, LAP Lambert Academic Publishing, Taschenbuch, neu.
Techniques to address Last Stage Leakage Recovery and Dynamic IR Drop ab 49.9 € als Taschenbuch: . Aus dem Bereich: Bücher, Wissenschaft, Technik,.
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