Semiconductor-meatal hypride structure and pn junctions made from A3B5
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Bester Preis: Fr. 73.09 (€ 74.89)¹ (vom 23.02.2019)1
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Semiconductor-meatal hypride structure and pn junctions made from A3B5 (2015)
DE PB NW RPISBN: 9783659758034 bzw. 3659758035, in Deutsch, LAP Lambert Academic Publishing Sep 2015, Taschenbuch, neu, Nachdruck.
Von Händler/Antiquariat, AHA-BUCH GmbH [51283250], Einbeck, Germany.
This item is printed on demand - Print on Demand Titel. Neuware - Indium antimonide microcrystals are very important in fabricating magnetic microsensors to be used in satellites for communications and televisions. The type of used dopant affects upon the galvanomagnetic properties of these microcrystals. Doping of InSb microcrystals with Te or Bi donor impurities allows the carrier concentration in crystals to vary from 1x1017 up to 5x1017cm-3. The electrical (galvanomagnetic) properties were studied as a function of both temperature and magnetic field. Bi doped InSb microcrystal at doping level 1x1017cm-3 has the highest resistivity, Hall constant, mobility and magnetoresistance but that with Bi doping level 5x1017cm-3 has the lowest resistivity, Hall constant and magnetoresistance. On the other hand, the lowest mobility was referred to Te doped InSb microcrystal at doping level 3x1017cm-3. InSb microcrystal doped with Bi at dopant level 3x1017cm-3 has a constant magnetoresistance with studied temperature range. n-type indium antimonide-Au hybrid structure were successfully fabricated on glass or p-GaAs substrates by flash evaporation technique 264 pp. Englisch.
This item is printed on demand - Print on Demand Titel. Neuware - Indium antimonide microcrystals are very important in fabricating magnetic microsensors to be used in satellites for communications and televisions. The type of used dopant affects upon the galvanomagnetic properties of these microcrystals. Doping of InSb microcrystals with Te or Bi donor impurities allows the carrier concentration in crystals to vary from 1x1017 up to 5x1017cm-3. The electrical (galvanomagnetic) properties were studied as a function of both temperature and magnetic field. Bi doped InSb microcrystal at doping level 1x1017cm-3 has the highest resistivity, Hall constant, mobility and magnetoresistance but that with Bi doping level 5x1017cm-3 has the lowest resistivity, Hall constant and magnetoresistance. On the other hand, the lowest mobility was referred to Te doped InSb microcrystal at doping level 3x1017cm-3. InSb microcrystal doped with Bi at dopant level 3x1017cm-3 has a constant magnetoresistance with studied temperature range. n-type indium antimonide-Au hybrid structure were successfully fabricated on glass or p-GaAs substrates by flash evaporation technique 264 pp. Englisch.
2
Semiconductor-meatal hypride structure and pn junctions made from A3B5
DE NWISBN: 9783659758034 bzw. 3659758035, in Deutsch, neu.
Lieferung aus: Deutschland, zzgl. Versandkosten.
Indium antimonide microcrystals are very important in fabricating magnetic microsensors to be used in satellites for communications and televisions. The type of used dopant affects upon the galvanomagnetic properties of these microcrystals. Doping of InSb microcrystals with Te or Bi donor impurities allows the carrier concentration in crystals to vary from 1x1017 up to 5x1017cm-3. The electrical (galvanomagnetic) properties were studied as a function of both temperature and magnetic field. Bi doped InSb microcrystal at doping level 1x1017cm-3 has the highest resistivity, Hall constant, mobility and magnetoresistance but that with Bi doping level 5x1017cm-3 has the lowest resistivity, Hall constant and magnetoresistance. On the other hand, the lowest mobility was referred to Te doped InSb microcrystal at doping level 3x1017cm-3. InSb microcrystal doped with Bi at dopant level 3x1017cm-3 has a constant magnetoresistance with studied temperature range. n-type indium antimonide-Au hybrid structure were successfully fabricated on glass or p-GaAs substrates by flash evaporation technique.
Indium antimonide microcrystals are very important in fabricating magnetic microsensors to be used in satellites for communications and televisions. The type of used dopant affects upon the galvanomagnetic properties of these microcrystals. Doping of InSb microcrystals with Te or Bi donor impurities allows the carrier concentration in crystals to vary from 1x1017 up to 5x1017cm-3. The electrical (galvanomagnetic) properties were studied as a function of both temperature and magnetic field. Bi doped InSb microcrystal at doping level 1x1017cm-3 has the highest resistivity, Hall constant, mobility and magnetoresistance but that with Bi doping level 5x1017cm-3 has the lowest resistivity, Hall constant and magnetoresistance. On the other hand, the lowest mobility was referred to Te doped InSb microcrystal at doping level 3x1017cm-3. InSb microcrystal doped with Bi at dopant level 3x1017cm-3 has a constant magnetoresistance with studied temperature range. n-type indium antimonide-Au hybrid structure were successfully fabricated on glass or p-GaAs substrates by flash evaporation technique.
3
Semiconductor-meatal hypride structure and pn junctions made from A3B5
DE PB NWISBN: 9783659758034 bzw. 3659758035, in Deutsch, LAP Lambert Academic Publishing, Taschenbuch, neu.
Lieferung aus: Deutschland, Versandkostenfrei.
Semiconductor-meatal hypride structure and pn junctions made from A3B5: Indium antimonide microcrystals are very important in fabricating magnetic microsensors to be used in satellites for communications and televisions. The type of used dopant affects upon the galvanomagnetic properties of these microcrystals. Doping of InSb microcrystals with Te or Bi donor impurities allows the carrier concentration in crystals to vary from 1x1017 up to 5x1017cm-3. The electrical (galvanomagnetic) properties were studied as a function of both temperature and magnetic field. Bi doped InSb microcrystal at doping level 1x1017cm-3 has the highest resistivity, Hall constant, mobility and magnetoresistance but that with Bi doping level 5x1017cm-3 has the lowest resistivity, Hall constant and magnetoresistance. On the other hand, the lowest mobility was referred to Te doped InSb microcrystal at doping level 3x1017cm-3. InSb microcrystal doped with Bi at dopant level 3x1017cm-3 has a constant magnetoresistance with studied temperature range. n-type indium antimonide-Au hybrid structure were successfully fabricated on glass or p-GaAs substrates by flash evaporation technique, Englisch, Taschenbuch.
Semiconductor-meatal hypride structure and pn junctions made from A3B5: Indium antimonide microcrystals are very important in fabricating magnetic microsensors to be used in satellites for communications and televisions. The type of used dopant affects upon the galvanomagnetic properties of these microcrystals. Doping of InSb microcrystals with Te or Bi donor impurities allows the carrier concentration in crystals to vary from 1x1017 up to 5x1017cm-3. The electrical (galvanomagnetic) properties were studied as a function of both temperature and magnetic field. Bi doped InSb microcrystal at doping level 1x1017cm-3 has the highest resistivity, Hall constant, mobility and magnetoresistance but that with Bi doping level 5x1017cm-3 has the lowest resistivity, Hall constant and magnetoresistance. On the other hand, the lowest mobility was referred to Te doped InSb microcrystal at doping level 3x1017cm-3. InSb microcrystal doped with Bi at dopant level 3x1017cm-3 has a constant magnetoresistance with studied temperature range. n-type indium antimonide-Au hybrid structure were successfully fabricated on glass or p-GaAs substrates by flash evaporation technique, Englisch, Taschenbuch.
4
Semiconductor-meatal hypride structure and pn junctions made from A3B5 (2015)
DE PB NWISBN: 9783659758034 bzw. 3659758035, in Deutsch, 264 Seiten, LAP Lambert Academic Publishing, Taschenbuch, neu.
Lieferung aus: Deutschland, Versandkosten nach: Deutschland, Versandkostenfrei.
Von Händler/Antiquariat, Syndikat Buchdienst, [4235284].
Indium antimonide microcrystals are very important in fabricating magnetic microsensors to be used in satellites for communications and televisions. The type of used dopant affects upon the galvanomagnetic properties of these microcrystals. Doping of InSb microcrystals with Te or Bi donor impurities allows the carrier concentration in crystals to vary from 1x1017 up to 5x1017cm-3. The electrical (galvanomagnetic) properties were studied as a function of both temperature and magnetic field. Bi doped InSb microcrystal at doping level 1x1017cm-3 has the highest resistivity, Hall constant, mobility and magnetoresistance but that with Bi doping level 5x1017cm-3 has the lowest resistivity, Hall constant and magnetoresistance. On the other hand, the lowest mobility was referred to Te doped InSb microcrystal at doping level 3x1017cm-3. InSb microcrystal doped with Bi at dopant level 3x1017cm-3 has a constant magnetoresistance with studied temperature range. n-type indium antimonide-Au hybrid structure were successfully fabricated on glass or p-GaAs substrates by flash evaporation technique, 2015, Taschenbuch / Paperback, Neuware, H: 220mm, B: 150mm, 264, Internationaler Versand, Selbstabholung und Barzahlung, PayPal, offene Rechnung, Banküberweisung.
Von Händler/Antiquariat, Syndikat Buchdienst, [4235284].
Indium antimonide microcrystals are very important in fabricating magnetic microsensors to be used in satellites for communications and televisions. The type of used dopant affects upon the galvanomagnetic properties of these microcrystals. Doping of InSb microcrystals with Te or Bi donor impurities allows the carrier concentration in crystals to vary from 1x1017 up to 5x1017cm-3. The electrical (galvanomagnetic) properties were studied as a function of both temperature and magnetic field. Bi doped InSb microcrystal at doping level 1x1017cm-3 has the highest resistivity, Hall constant, mobility and magnetoresistance but that with Bi doping level 5x1017cm-3 has the lowest resistivity, Hall constant and magnetoresistance. On the other hand, the lowest mobility was referred to Te doped InSb microcrystal at doping level 3x1017cm-3. InSb microcrystal doped with Bi at dopant level 3x1017cm-3 has a constant magnetoresistance with studied temperature range. n-type indium antimonide-Au hybrid structure were successfully fabricated on glass or p-GaAs substrates by flash evaporation technique, 2015, Taschenbuch / Paperback, Neuware, H: 220mm, B: 150mm, 264, Internationaler Versand, Selbstabholung und Barzahlung, PayPal, offene Rechnung, Banküberweisung.
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Symbolbild
Semiconductor-meatal hypride structure and pn junctions made from A3B5 (2015)
EN PB NW RPISBN: 9783659758034 bzw. 3659758035, in Englisch, LAP Lambert Academic Publishing, Taschenbuch, neu, Nachdruck.
Lieferung aus: Deutschland, Versandkostenfrei.
Von Händler/Antiquariat, European-Media-Service Mannheim [1048135], Mannheim, Germany.
This item is printed on demand for shipment within 3 working days.
Von Händler/Antiquariat, European-Media-Service Mannheim [1048135], Mannheim, Germany.
This item is printed on demand for shipment within 3 working days.
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Semiconductor-meatal hypride structure and pn junctions made from A3B5 (2015)
EN PB NWISBN: 9783659758034 bzw. 3659758035, in Englisch, 264 Seiten, LAP LAMBERT Academic Publishing, Taschenbuch, neu.
Lieferung aus: Deutschland, Gewöhnlich versandfertig in 24 Stunden, Versandkostenfrei. Tatsächliche Versandkosten können abweichen.
Von Händler/Antiquariat, averdo24.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
Von Händler/Antiquariat, averdo24.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
8
Symbolbild
Semiconductormeatal hypride structure and pn junctions made from A3B5
DE NWISBN: 9783659758034 bzw. 3659758035, in Deutsch, neu.
Lieferung aus: Deutschland, Versandkosten nach: Deutschland, Versandkostenfrei.
Von Händler/Antiquariat, Magazin Aziya, [3458207].
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
Von Händler/Antiquariat, Magazin Aziya, [3458207].
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen
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