HeteroSiC & WASMPE 2011 - 2 Angebote vergleichen

Lieferung aus: Vereinigte Staaten von Amerika, Lagernd, zzgl. Versandkosten.
Volume is indexed by Thomson Reuters CPCI-S (WoS).The aim of this collection of peer-reviewed papers is to promote the open discussion of SiC hetero-epitaxy as related to the possibility of growing SiC on other materials and of growing various SiC polytypes so as to take advantage of the possibilities of band-gap engineering, These proceedings present the latest developments in Silicon Carbide, and the prospects for Gallium Nitride (GaN on Si, SiC, sapphire and free-standing) and Diamond power electronics. Finally, the progress made in Graphene technology, such as its introduction into devices and its relationship to SiC epitaxial material, is considered.

Lieferung aus: Deutschland, Versandkostenfrei.
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