HeteroSiC & WASMPE 2011 - 5 Angebote vergleichen

Lieferung aus: Vereinigte Staaten von Amerika, Lagernd, zzgl. Versandkosten.
Collection of selected, peer reviewed papers from the 2013 HeteroSiC-WASMPE, June 17-19, 2013, Nice, France. The 25 papers are grouped as follows: Chapter 1: 3C-SiC – Epitaxy, Characterization and Devices; Chapter 2: 4H-SiC and 15R-SiC – Growth and Characterization; Chapter 3: Related Materials – Gallium Nitride, Graphene and Silicon; Chapter 4: SiC Devices and Device Processing.

Lieferung aus: Vereinigte Staaten von Amerika, Lagernd, zzgl. Versandkosten.
Volume is indexed by Thomson Reuters CPCI-S (WoS).The aim of this collection of peer-reviewed papers is to promote the open discussion of SiC hetero-epitaxy as related to the possibility of growing SiC on other materials and of growing various SiC polytypes so as to take advantage of the possibilities of band-gap engineering, These proceedings present the latest developments in Silicon Carbide, and the prospects for Gallium Nitride (GaN on Si, SiC, sapphire and free-standing) and Diamond power electronics. Finally, the progress made in Graphene technology, such as its introduction into devices and its relationship to SiC epitaxial material, is considered.

Lieferung aus: Deutschland, Versandkostenfrei.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen

Lieferung aus: Deutschland, Versandkostenfrei.
Die Beschreibung dieses Angebotes ist von geringer Qualität oder in einer Fremdsprache. Trotzdem anzeigen